unisonic technologies co., ltd 13003EDA preliminary npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r223-020.b npn silicon bipolar transistors for low frequency amplification ? description the utc 13003EDA is a silicon npn power switching transistor; it uses utc?s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. the utc 13003EDA is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light. ? features * high collector-base breakdown voltage * low reverse leakage current * high reliability ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13003EDAl-tm3-t 13003EDAg-tm3-t to-251 b c e tube 13003EDAl-t60-k 13003EDAg-t60-k to-126 b c e bulk 13003EDAl-t92-b 13003EDAg-t92-b to-92 b c e tape box 13003EDAl-t92-k 13003EDAg-t92-k to-92 b c e bulk note: pin assignment: b: base c: collector e: emitter (1) t: tube, b: bluk, k: bulk (2) tm3: to-251, t60: to-126, t92: to-92 (3) l: lead free, g: halogen free 13003EDAl -tm3 -t (1)packing type (2)package type (3)lead free
13003EDA preliminary npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r223-020.b ? marking information package marking to-251 to-126 to-92
13003EDA preliminary npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r223-020.b ? absolute maximum ratings (t a =25c, unless otherwise noted) parameter symbol ratings unit collector-base voltage v cbo 850 v collector-emitter voltage v ceo 500 v emitter-base voltage v ebo 9 v collector current continuous i c 1.3 a peak i cm 3 a power dissipation (t c =25c) to-251 p d 10 w to-126 20 w to-92 1 w junction temperature t j 150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol rating unit junction to ambient to-251 ja 95 c/w to-126 100 to-92 150 junction to case to-251 jc 13 c/w to-126 7.5 to-92 112 ? electrical characteristics (t a =25 c, unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =1ma 850 v collector-emitter breakdown voltage bv ceo i c =1ma 500 v emitter-base breakdown voltage bv ebo i e =1ma 9 v collector cut-off current i cbo v cb =850v, i e =0 0.1 ma collector-emitter cut-off current i ceo v ce =500v, i b =0 0.1 ma emitter-base cut-off current i ebo v eb =9v, i c =0 0.1 ma dc current gain (note) h fe v ce =5v, i c =0.2a 23 35 low current and high current h fe2 h fe1 ratio h fe1 / h fe2 h fe1 : v ce =5v, i c =5ma 0.75 0.9 h fe2 : v ce =5v, i c =0.2a collector-emitter saturati on voltage (note) v ce ( sat ) i c =0.5a, i b =0.1a 0.2 0.8 v base-emitter saturation voltage (note) v be ( sat ) i c =0.5a, i b =0.1a 0.9 1.5 v storage time t s ui9600, i c =100ma 2 5 s rise time t r 1 s fall time t f 1 s transition frequency f t v ce =10v, i c =0.1a, f=1mhz 5 mhz note: pulse test, pulse width tp 300s, duty cycle 1.5%.
13003EDA preliminary npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r223-020.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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